The Infineon IPA80R1K2P7XKSA1 is an 800 V N-channel power MOSFET from the CoolMOS™ P7 series, built on a charge-compensation superjunction technology that cuts the Rds(on) × Qg figure of merit versus older planar devices.
At 4.5 A continuous drain the I²R loss reaches about 24 W — right at the package's 25 W dissipation limit, so the heatsink design needs to keep the junction below 150 °C. The gate charge of 11 nC at 10 V is low enough that a standard PWM controller's gate-drive output can switch it at frequencies up to 100 kHz without excessive drive loss; in a 65–100 kHz PFC stage the switching loss from Qg is manageable. The input capacitance of 300 pF at 500 V drain-source means the Miller plateau is narrow, which helps reduce cross-conduction in hard-switched topologies.
Infineon has placed the IPA80R1K2P7XKSA1 into Last Buy status. That means the final production window is open now, and once inventory clears through authorised and independent channels, this order code will not be manufactured again. For a BOM that currently specifies this MOSFET, the immediate action is to secure enough quantity for the remaining production run or to begin qualifying a pin-compatible replacement.
Package and mounting — the full-pack advantage
The PG-TO220-3-FP is a fully isolated full-pack variant of the standard TO-220. The plastic encapsulation extends over the back of the tab, so the mounting hole and the entire exposed surface are electrically isolated from the drain. The three through-hole leads fit a 2.54 mm pitch footprint, common on PFC and flyback PCB layouts.