800 V CoolMOS CE — cost-optimized high-voltage switching
The Infineon IPA80R1K0CEXKSA1 is an N-channel enhancement-mode MOSFET from the CoolMOS™ CE series, designed for high-voltage power conversion where cost efficiency matters alongside switching performance. Its 800 V drain-to-source breakdown voltage (Vdss) and 3.6 A continuous drain current (Id) at 25°C case temperature target offline flyback converters, PFC stages, and auxiliary power supplies in industrial and consumer equipment.
TO-220 Full Pack — isolated package simplifies mounting
The IPA80R1K0CEXKSA1 comes in a TO-220-3 Full Pack (PG-TO220-FP) through-hole package. This saves assembly time and improves thermal transfer in high-voltage designs where creepage and clearance are critical. The through-hole leads suit wave-soldering or hand-soldering into a PCB or point-to-point wiring.
The device requires a 10 V gate drive for the rated on-resistance; the maximum gate-source voltage is ±20 V. Typical gate charge (Qg) is 31 nC at 10 V, which gives a reasonable switching speed for a 950 mOhm device in a 100 kHz-class converter. Input capacitance (Ciss) is 785 pF at 100 V drain-source, so the gate-drive power requirement is modest. The threshold voltage (Vgs(th)) is 3.9 V maximum at 250 µA drain current, meaning a 5 V logic-level gate drive may not fully enhance the channel — plan for a 10 V gate-drive rail or a dedicated driver.
Thermal and environmental range
Maximum power dissipation is 32 W at case temperature (Tc), which assumes a suitable heatsink. The wide temperature range suits outdoor telecom, motor drives, and power supplies in unconditioned enclosures.