650 V CoolMOS for offline flyback and PFC stages
The Infineon IPA65R660CFDXKSA1 is an N-channel CoolMOS power MOSFET in a TO-220-3 Full Pack (PG-TO220-3-111) through-hole package. The 22 nC typical gate charge keeps switching losses manageable in hard-switched topologies up to several hundred kilohertz. Built on Infineon's CoolMOS technology, it targets power factor correction (PFC) stages, flyback converters, and auxiliary power supplies in industrial and telecom equipment where the full-pack insulation simplifies heatsinking without an isolation pad.
NRND — last-time-buy window is the procurement reality
That means Infineon has flagged it for phase-out — no new production allocations, and the last-time-buy window is either open or closed depending on the specific PCN date code. For a production BOM already qualified to this exact order code, the sourcing play is to secure remaining factory or franchised-distributor inventory before the LTB expires, then transition to a successor. If you are at the design stage, NRND is a hard stop: select a current CoolMOS or 650 V superjunction MOSFET instead.
The package is rated for 27.8 W dissipation at the case — so at full rated current you are right at the thermal ceiling, even with the full-pack's direct-to-heatsink mounting. In practice, designs running the IPA65R660CFDXKSA1 at 6 A need good thermal interface and airflow or a lower duty cycle.
Package and mounting — TO-220 Full Pack
This simplifies assembly and reduces BOM cost in high-volume builds. The through-hole mounting suits wave-solder or manual insertion.