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Infineon Technologies IPA65R650CEXKSA1 — Discrete Semiconductors

Infineon IPA65R650CEXKSA1 CoolMOS™ CE N-Channel MOSFET

MPNIPA65R650CEXKSA1
Active

Infineon CoolMOS™ CE series, IPA65R650CEXKSA1, N-Channel MOSFET, 650 V Vdss, 7 A Id, 650 mOhm Rds(on) @ 10 V, TO-220-3 Full Pack, Through Hole, -40°C to 150°C.

$1.2300Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA65R650CEXKSA1 specifications
ParameterValue
SeriesCoolMOS™ CE
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation28W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 210µA
Rds on (Max) @ id, vgs650mOhm @ 2.1A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds440 pF @ 100 V

Product details

650 V, 7 A CoolMOS™ CE — what this N-channel MOSFET brings to the switching supply

The TO-220 Full Pack package provides full isolation from the heatsink — no insulating pad needed, which simplifies assembly and improves thermal transfer to the mounting surface. That low gate charge keeps switching losses in check at moderate frequencies — expect clean transitions in the 50–150 kHz range without oversized gate drivers. The input capacitance of 440 pF at 100 V Vds confirms the part is optimised for hard-switching topologies, not resonant or soft-switching designs where higher Ciss can be tolerated.

No need to stockpile or search for a drop-in replacement yet — the CoolMOS™ CE family remains a supported portfolio.

Package and thermal handling — the Full Pack advantage

The TO-220 Full Pack (PG-TO220-3-FP) isolates the backside tab electrically, so the heatsink can be chassis-grounded without a mica washer or silicone pad. Maximum power dissipation is 28 W at case temperature — enough for a 15–25 W flyback converter when the junction is kept below 150°C.

Frequently asked questions

What is the Rds(on) of IPA65R650CEXKSA1?

The maximum on-resistance is 650 mOhm at a gate-source voltage of 10 V and a drain current of 2.1 A. This is the figure to use for worst-case conduction loss calculations in a switching converter.