IPA65R650CEXKSA1

Infineon Technologies

Infineon CoolMOS™ CE series, IPA65R650CEXKSA1, N-Channel MOSFET, 650 V Vdss, 7 A Id, 650 mOhm Rds(on) @ 10 V, TO-220-3 Full Pack, Through Hole, -40°C to 150°C.

Infineon Technologies IPA65R650CEXKSA1
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[IN STOCK] In Stock: 2 pcs
$4.02/ pc

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Technical specifications

IPA65R650CEXKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™ CE
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation28W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 210µA
Rds on (Max) @ id, vgs650mOhm @ 2.1A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds440 pF @ 100 V

Technical details

650 V, 7 A CoolMOS™ CE — what this N-channel MOSFET brings to the switching supply

The TO-220 Full Pack package provides full isolation from the heatsink — no insulating pad needed, which simplifies assembly and improves thermal transfer to the mounting surface. That low gate charge keeps switching losses in check at moderate frequencies — expect clean transitions in the 50–150 kHz range without oversized gate drivers. The input capacitance of 440 pF at 100 V Vds confirms the part is optimised for hard-switching topologies, not resonant or soft-switching designs where higher Ciss can be tolerated.

No need to stockpile or search for a drop-in replacement yet — the CoolMOS™ CE family remains a supported portfolio.

Package and thermal handling — the Full Pack advantage

The TO-220 Full Pack (PG-TO220-3-FP) isolates the backside tab electrically, so the heatsink can be chassis-grounded without a mica washer or silicone pad. Maximum power dissipation is 28 W at case temperature — enough for a 15–25 W flyback converter when the junction is kept below 150°C.

IPA65R650CEXKSA1
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