Infineon CoolMOS™ IPA65R600C6, N-channel MOSFET, 650 V Vdss, 7.3 A continuous drain, 600 mOhm Rds(on) max at 10 V, 23 nC gate charge, TO-220-3 Full Pack, -55°C to 150°C junction.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7.3A (Tc) |
| Power dissipation | 28W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 210µA |
| Rds on (Max) @ id, vgs | 600mOhm @ 2.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 23 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 440 pF @ 100 V |
Input capacitance is 440 pF at 100 V drain-source, so the Miller plateau is manageable. For a 65–100 kHz PFC or flyback, the switching losses stay in check.
Maximum power dissipation is 28 W at case temperature — that's the ceiling with an infinite heatsink; real-world derating depends on your thermal interface and airflow.
The maximum gate threshold voltage is 3.5 V at 210 µA drain current.