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Infineon Technologies IPA65R420CFDXKSA1 — Discrete Semiconductors

Infineon IPA65R420CFDXKSA1 CoolMOS N-Ch MOSFET, 650V, 8.7A

MPNIPA65R420CFDXKSA1
NRND

Infineon CoolMOS™ IPA65R420CFDXKSA1, N-Channel MOSFET (Metal Oxide), 650 V drain-to-source voltage, 8.7 A continuous drain current at 25°C, 420 mOhm Rds(on) at 10 V, 32 nC gate charge, PG-TO220-3-111 Full Pack, -55°C to 150°C junction temperature.

$1.6693Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA65R420CFDXKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8.7A (Tc)
Power dissipation31.2W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 340µA
Rds on (Max) @ id, vgs420mOhm @ 3.4A, 10V
Gate charge (Qg) (Max) @ vgs32 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds870 pF @ 100 V

Product details

650 V CoolMOS — the isolated-package workhorse for offline power

This part belongs to Infineon's CoolMOS family, a mature high-voltage MOSFET platform optimised for hard-switching topologies like PFC boost stages, flyback converters, and LLC half-bridges in AC-DC power supplies rated up to several hundred watts.

NRND — plan the last-time-buy or evaluate a drop-in

For a BOM line already qualified, that means the window for last-time-buy orders is open but finite — Infineon will eventually issue an EOL notice with a final order date. New designs should target a currently-active CoolMOS sibling in the same voltage and package class. Sourcing through independent distribution remains viable for production support and bridge quantities, but the NRND flag should trigger a qualification plan for an alternative if volume production extends beyond the next 12–18 months.

The 650 V Vdss gives 15–20% margin on a 400 V DC bus (typical PFC output), which is comfortable for universal-input offline supplies. Gate charge of 32 nC at 10 V is moderate — a standard gate driver IC can switch it at 65–100 kHz without excessive driver dissipation. Input capacitance of 870 pF at 100 V Vds is low enough that the Miller plateau does not dominate the switching transition, but you still want a gate-drive resistor in the 10–22 Ω range to control dv/dt.

Package note: TO-220 Full Pack rework and mounting

The PG-TO220-3-111 Full Pack is a through-hole package with the mounting hole in the tab. That saves a BOM line and a manual assembly step. For rework, the plastic body is thicker than a standard TO-220, so it takes a bit longer to heat-soak the tab when desoldering; a 400°C iron with a wide tip works. The package is MSL 1, no bake required before reflow if the bag seal is intact.

Frequently asked questions

What is the replacement for IPA65R420CFDXKSA1?

The evidence does not list an official Infineon successor order code. For a pin-compatible drop-in, look at the current CoolMOS C7 or P7 series parts in the same 650 V, TO-220 Full Pack, 400–500 mOhm range — for example, the IPx65R4xx family. Verify gate drive voltage and package variant against your layout before substituting.

What is the difference between IPA65R420CFDXKSA1 and IPA65R380CFDXKSA1?

The primary difference is on-resistance: the IPA65R420CFDXKSA1 has a maximum Rds(on) of 420 mOhm, while the IPA65R380CFDXKSA1 is a lower-resistance variant at 380 mOhm. Both are 650 V CoolMOS N-channel devices in the same TO-220 Full Pack package. The 380 mOhm part will have slightly lower conduction loss at the same current, but the difference is small — about 10% — and may not justify a requalification unless the thermal budget is tight.