NRND — plan your last-time-buy or alternative now
The IPA65R380E6XKSA1: This is the official flag that the part is in the phase-out pipeline — no LTB date is published here, but the clock is running.
The IPA65R380E6XKSA1 is a 650 V drain-source N-channel MOSFET from Infineon's CoolMOS™ series, built on a charge-compensation superjunction technology that keeps on-resistance low while maintaining high breakdown voltage. Input capacitance is 710 pF at 100 V Vds, which keeps the Miller plateau manageable.
Through-hole mounting and thermal management
The through-hole PG-TO220-FP package is a standard vertical-mount footprint for heatsink attachment. Maximum power dissipation is 31 W at case temperature — derate linearly above 25°C. The full-pack construction means the backside tab is electrically isolated, so no mica or sil-pad is needed; a simple thermal grease interface to the heatsink is sufficient.
