650 V CoolMOS in a full-pack TO-220
Total gate charge is 41 nC at 10 V, which sets the driver energy per switching cycle. At moderate frequencies (50–100 kHz) this keeps gate-drive losses manageable with standard MOSFET drivers. Input capacitance is 1100 pF at 100 V drain-source, giving a reasonable Miller plateau width for clean turn-on. The 4.5 V threshold at 440 µA means a 10 V drive is needed to reach the minimum Rds(on); logic-level drive at 5 V will not fully enhance the channel.
For a production line already qualified, the NRND status does not trigger an immediate last-time-buy, but it does mean the supply window is finite. Buyers should evaluate a pin-compatible second source or a successor within the CoolMOS family for any new project.
Thermal and mounting note
Maximum power dissipation is 32 W at case temperature. The TO-220 Full Pack has a metal backplate electrically isolated from the die, so no insulating pad is required — the device can be bolted directly to a grounded heatsink. The supplier device package is PG-TO220-3-111. Through-hole mounting suits wave-solder assembly; the three leads are standard 0.8 mm pitch.