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Infineon Technologies IPA65R280C6 — Discrete Semiconductors

Infineon IPA65R280C6 CoolMOS N-Ch MOSFET, 650 V, 280 mOhm

MPNIPA65R280C6
Active

Infineon CoolMOS™ IPA65R280C6 N-Channel MOSFET, 650 V Vdss, 280 mOhm Rds(on) @ 10 V, 13.8 A Id, TO-220-3 Full Pack, PG-TO220-3-111, -55 to 150 °C.

Infineon Technologies IPA65R280C6 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA65R280C6 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13.8A (Tc)
Power dissipation32W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 440µA
Rds on (Max) @ id, vgs280mOhm @ 4.4A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds950 pF @ 100 V

Product details

650 V CoolMOS for offline flyback and PFC stages

Gate drive and switching behaviour

The gate threshold maximum is 3.5 V at 440 µA drain current, and the recommended drive voltage for minimum on-resistance is 10 V.

Thermal and operating range

Maximum power dissipation is 32 W at case temperature, which in a TO-220 Full Pack typically requires a heatsink for any continuous load above a few watts. The isolated backside of the Full Pack package means the thermal path is through the tab to the heatsink — ensure good thermal interface material and a flat mounting surface.

Frequently asked questions

Is IPA65R280C6 obsolete or still active?

IPA65R280C6 is listed as active by the manufacturer.

What is the Rds(on) of IPA65R280C6?

This is the figure to use for worst-case conduction loss calculations in a power supply design.

Can IPA65R280C6 be used in a flyback converter?

Yes. The 650 V Vdss and 280 mOhm Rds(on) are well matched to flyback converters operating from a 400 V DC bus (rectified 230 V AC) at power levels up to roughly 100 W, depending on switching frequency and thermal management. The CoolMOS technology also provides fast switching and low Qrr body diode, which helps reduce ringing and losses in hard-switched topologies.