Skip to main content
Log in
Infineon Technologies IPA65R225C7XKSA1 — Discrete Semiconductors

Infineon IPA65R225C7XKSA1 CoolMOS C7 N-Ch MOSFET, 650V

MPNIPA65R225C7XKSA1
Active

Infineon CoolMOS™ C7 series, N-Channel MOSFET, 650 V drain-to-source voltage, 225 mOhm Rds(on) at 10 V gate drive, 7 A continuous drain current, TO-220-3 Full Pack through-hole package, -55°C to 150°C junction temperature.

$3.3100Ref. price · indicative, final on quote
Infineon Technologies IPA65R225C7XKSA1 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA65R225C7XKSA1 specifications
ParameterValue
SeriesCoolMOS™ C7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation29W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 240µA
Rds on (Max) @ id, vgs225mOhm @ 4.8A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds996 pF @ 400 V

Product details

The Infineon IPA65R225C7XKSA1 is an N-channel enhancement-mode power MOSFET from the CoolMOS C7 series, built on a superjunction technology.

Gate charge is 20 nC at 10 V. Input capacitance is 996 pF at 400 V drain-source.

Temperature range and package considerations

The TO-220 Full Pack isolates the backside tab electrically, so the device can be bolted directly to a metal enclosure or heatsink without an insulating washer. Maximum power dissipation is 29 W at case temperature, which sets the thermal budget for the design; a proper heatsink and thermal interface are required to stay within the junction limit at full load.

The base product number is IPA65R225, and the suffix indicates the C7 generation and the TO-220 Full Pack package variant. RoHS compliance is standard for this series; the part is lead-free and suitable for EU RoHS-directed assemblies.

Frequently asked questions

How does IPA65R225C7XKSA1 compare to IPA65R225C6?

Both are 650 V, 225 mOhm CoolMOS devices in the same TO-220 Full Pack. The C7 generation typically offers lower gate charge and improved switching performance over the C6 generation, making it better suited for higher-frequency designs. Pin-compatible for drop-in replacement.