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Infineon Technologies IPA65R190E6XKSA1 — Discrete Semiconductors

IPA65R190E6XKSA1 CoolMOS N-Ch MOSFET, 650V 190mΩ TO-220

MPNIPA65R190E6XKSA1
NRND

Infineon CoolMOS™ IPA65R190E6XKSA1, N-Channel MOSFET, 650V Vds, 190mOhm Rds(on) @ 10V, 20.2A Id, TO-220-3 Full Pack, PG-TO220-3-111, -55°C to 150°C.

$2.1056Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA65R190E6XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20.2A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 730µA
Rds on (Max) @ id, vgs190mOhm @ 7.3A, 10V
Gate charge (Qg) (Max) @ vgs73 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1620 pF @ 100 V

Product details

Junction temperature range from -55°C to 150°C covers industrial and extended-temperature environments.

NRND status — plan your last-time-buy or alternate now

That means Infineon will not accept new design wins, and production may wind down without a formal last-time-buy window. For an existing BOM line, secure enough stock for the remaining production run or qualify a pin-compatible replacement from the same CoolMOS family.

Key ratings that drive the switching design

The 650 V drain-source voltage gives headroom for 400 V DC-link rails with margin. Gate charge of 73 nC at 10 V means a gate driver capable of sourcing and sinking a couple of amps keeps switching edges clean. Input capacitance of 1620 pF at 100 V drain-source sets the Ciss the driver sees; pair it with a gate resistor in the 10–22 Ω range for a typical hard-switched PFC. Maximum power dissipation of 34 W at case temperature defines the heatsink requirement — derate for ambient if running above 25°C case.

Through-hole TO-220-3 Full Pack with the supplier device code PG-TO220-3-111. The full-pack construction means the backside tab is electrically isolated from the drain — no mica washer or sil-pad required when mounting to a grounded heatsink. Still use thermal compound for good interface conductivity. The three leads are standard 0.025-inch square pins on 0.1-inch pitch; fits any TO-220 footprint on the board.

Frequently asked questions

What is the replacement for IPA65R190E6XKSA1 since it is NRND?

Infineon has not published an official direct replacement for this specific NRND device. A pin-compatible alternate from the same CoolMOS series with a similar 650 V / 190 mΩ rating is the closest starting point — verify gate charge, capacitance, and thermal performance against your switching frequency and load before committing the BOM.

What is the Rds(on) of IPA65R190E?

190 mΩ maximum at 10 V gate drive with 7.3 A drain current, as shown in the part number itself.