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Infineon Technologies IPA65R190E6 — Discrete Semiconductors

Infineon IPA65R190E6 CoolMOS N-Channel MOSFET, 650 V

MPNIPA65R190E6
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Infineon CoolMOS™ IPA65R190E6, N-Channel MOSFET, 650 V Vdss, 190 mOhm Rds(on) @ 10 V, 20.2 A Id, TO-220-3 Full Pack, -55°C to 150°C TJ.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA65R190E6 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20.2A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 730µA
Rds on (Max) @ id, vgs190mOhm @ 7.3A, 10V
Gate charge (Qg) (Max) @ vgs73 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1620 pF @ 100 V

Product details

That 190 mOhm Rds(on) sets the conduction loss anchor for a PFC boost stage or flyback primary switch — at 7.3 A the dissipation sits at roughly 10 W, which the 34 W package limit can handle with a modest heatsink. In a real 85°C ambient with forced air, expect to derate to around 12–14 A continuous; the datasheet's safe operating area curve is the final arbiter for your switching frequency and duty cycle.

Gate drive and switching — 73 nC total gate charge

Total gate charge is 73 nC at 10 V Vgs, which is moderate for a 650 V, 190 mOhm device. A typical 1 A gate driver can charge the gate in about 73 ns, keeping switching losses manageable in a 100 kHz PFC. Input capacitance (Ciss) is 1620 pF at 100 V Vds — that's the load the gate driver sees during the Miller plateau. Pair it with a driver that can source and sink at least 1 A to avoid excessive turn-on/turn-off delay in hard-switched topologies.

The wide TJ range also gives headroom for transient overloads in automotive auxiliary converters (though this part is not AEC-Q101 qualified per the listing).

Frequently asked questions

What is the closest pin-compatible alternative to IPA65R190E6?

Within the CoolMOS family, parts sharing the same TO-220 Full Pack footprint and similar 650 V rating include the IPA65R380E6 (380 mOhm, lower current) and IPA65R125E6 (125 mOhm, higher current). The 190 mOhm variant sits in the middle of the density options — choose the Rds(on) tier that matches your conduction loss budget.