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Infineon Technologies IPA65R190CFDXKSA1 — Discrete Semiconductors

Infineon IPA65R190CFDXKSA1 CoolMOS N-Ch MOSFET, 650V 17.5A

MPNIPA65R190CFDXKSA1
NRND

Infineon CoolMOS™ IPA65R190CFDXKSA1, N-Channel MOSFET, 650 V drain-source, 190 mOhm Rds(on) at 10 V, 17.5 A continuous drain, 68 nC gate charge, TO-220-3 Full Pack, -55°C to 150°C.

$1.2700Ref. price · indicative, final on quote
Infineon Technologies IPA65R190CFDXKSA1 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA65R190CFDXKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17.5A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 730µA
Rds on (Max) @ id, vgs190mOhm @ 7.3A, 10V
Gate charge (Qg) (Max) @ vgs68 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1850 pF @ 100 V

Product details

NRND — not for new designs, still available through independent channels

The Infineon IPA65R190CFDXKSA1 is a CoolMOS™ N-channel power MOSFET in a TO-220-3 Full Pack through-hole package.

The 650 V drain-source rating suits universal-input AC-DC converters.

Package and thermal reality — TO-220 Full Pack

The PG-TO220-3-111 is a fully isolated full-pack variant — the metal tab is not electrically connected to the drain, so no insulating pad is needed between the device and the heatsink. The 34 W maximum power dissipation is the package limit at case temperature 25°C; in practice, derate by the junction-to-case thermal resistance.

Frequently asked questions

What is the Rds(on) of IPA65R190CFDXKSA1 at 10V?

The 10 V drive voltage is the rated condition for achieving the specified on-resistance.