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Infineon Technologies IPA65R190C6XKSA1 — Discrete Semiconductors

Infineon IPA65R190C6XKSA1 CoolMOS N-Ch 650 V 20.2 A MOSFET

MPNIPA65R190C6XKSA1
Obsolete

Infineon CoolMOS™ IPA65R190C6XKSA1, N-channel MOSFET, 650 V Vdss, 190 mΩ Rds(on) at 10 V, 20.2 A continuous drain, PG-TO220-3-111 full-pack, -55 to 150 °C.

$1.9300Ref. price · indicative, final on quote
Infineon Technologies IPA65R190C6XKSA1 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA65R190C6XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20.2A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 730µA
Rds on (Max) @ id, vgs190mOhm @ 7.3A, 10V
Gate charge (Qg) (Max) @ vgs73 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1620 pF @ 100 V

Product details

The Infineon IPA65R190C6XKSA1 is a 650 V N-channel CoolMOS power MOSFET in the PG-TO220-3-111 full-pack through-hole package.

The 650 V drain-source voltage suits offline converters. The 190 mΩ Rds(on) at 10 V gate drive places this part in the medium-Rds(on) range of the CoolMOS C6 family. Gate charge is 73 nC at 10 V. The full-pack TO-220 case (PG-TO220-3-111) provides electrical isolation between the mounting tab and the drain, but the 34 W dissipation ceiling must be respected in the thermal design.

For new designs or sustained production, a parametric cross to a current CoolMOS series device in the same package and voltage class is the practical path, though pin compatibility and gate-drive requirements should be confirmed against the target application's operating point.

Frequently asked questions

What is the replacement for IPA65R190C6XKSA1?

No official replacement order code has been published by Infineon for this specific device. For new designs, a parametric cross to a current CoolMOS series part (C7, P7, or CFD7) with a 650 V rating and similar Rds(on) in the same full-pack TO-220 package is recommended. Gate charge and drive voltage should be compared against the circuit requirements.