Infineon CoolMOS™ CFD2 series, N-channel MOSFET, 650 V drain-source, 110 mOhm on-resistance at 12.7 A, 10 V gate drive, TO-220 Full Pack through-hole package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CFD2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 31.2A (Tc) |
| Power dissipation | 34.7W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4.5V @ 1.3mA |
| Rds on (Max) @ id, vgs | 110mOhm @ 12.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 118 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3240 pF @ 100 V |
The IPA65R110CFDXKSA2: The TO-220 Full Pack package provides full isolation from the heatsink, so you skip the insulating pad and its thermal interface penalty; the PG-TO220-FP footprint is standard for this class.
The maximum power dissipation is 34.7 W at case temperature, which is the ceiling for a TO-220 Full Pack without a heatsink.
Yes, the IPA65R110CFDXKSA2 and IPA65R110CFD share the same CoolMOS™ CFD2 die and electrical ratings. The X suffix indicates a different packaging or handling variant, but they are functionally interchangeable in the same TO-220FP footprint.