Infineon CoolMOS™ IPA65R099C6XKSA1 N-Channel MOSFET, 650 V drain-to-source voltage, 38 A continuous drain current, 99 mOhm Rds(on) at 10 V, TO-220-3 Full Pack through-hole package, -55°C to 150°C operating temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 38A (Tc) |
| Power dissipation | 35W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 1.2mA |
| Rds on (Max) @ id, vgs | 99mOhm @ 12.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 127 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2780 pF @ 100 V |
Drain-to-source voltage is 650 V. Gate charge is 127 nC at 10 V. Input capacitance is 2780 pF at 100 V. Power dissipation is 35 W at case temperature.
The PG-TO220-3-111 supplier package is a through-hole, full-pack (isolated tab) variant. No insulating pad or washer is needed between the tab and the heatsink.
Yes, the lifecycle status is Obsolete. Production has ended; supply is limited to existing distributor and surplus stock.