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Infineon Technologies IPA60R600E6XKSA1 — Discrete Semiconductors

Infineon IPA60R600E6XKSA1 CoolMOS™ N-Channel MOSFET, 600 V

MPNIPA60R600E6XKSA1
NRND

Infineon CoolMOS™ series, N-Channel MOSFET, 600 V drain-source voltage, 7.3 A continuous drain current, 600 mOhm on-resistance at 10 V gate drive, TO-220-3 Full Pack through-hole package, -55°C to 150°C junction temperature.

$0.9144Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA60R600E6XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.3A (Tc)
Power dissipation28W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 200µA
Rds on (Max) @ id, vgs600mOhm @ 2.4A, 10V
Gate charge (Qg) (Max) @ vgs20.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds440 pF @ 100 V

Product details

NRND — plan a design-in replacement now

The IPA60R600E6XKSA1: It remains available through the independent channel for existing BOM lines, but new designs should target a current-production CoolMOS™ alternative. The 600 V, 600 mOhm, TO-220 Full Pack footprint is a common parametric node — Infineon's active CoolMOS™ CP or P7 series includes pin-compatible options at similar or lower Rds(on).

These numbers keep switching losses manageable in hard-switched topologies up to the 100 kHz range. The low Qg also eases the drive requirement — a standard gate driver or a bootstrap circuit can handle it without excessive dissipation.

Thermal and package notes

Maximum power dissipation is 28 W at case temperature. The TO-220 Full Pack isolates the tab electrically — no insulating pad needed between the device and heatsink, which simplifies assembly and improves thermal coupling. The PG-TO220-FP supplier package code confirms the fully encapsulated, isolated-tab variant.

Frequently asked questions

What is the replacement for IPA60R600E6XKSA1?

A parametric match — 600 V, 600 mOhm class, TO-220 Full Pack — can be found in Infineon's active CoolMOS™ CP or P7 series. The exact order code depends on the required Rds(on) and gate charge trade-off. Contact us with your quantity and we can propose a cross-reference.

What is the Vgs threshold of IPA60R600E6XKSA1?

Maximum gate threshold voltage is 3.5 V at 200 µA drain current.

What is the Vds of IPA60R600E6XKSA1?

Drain-to-source voltage rating is 600 V. This is the maximum voltage the MOSFET can block in the off state.