600 V, 7.3 A, 600 mOhm — the switching-loss envelope
The IPA60R600E6 is an N-channel CoolMOS ™ MOSFET rated for 600 V drain-to-source and 7.3 A continuous drain current at 25 °C case temperature. The 600 mOhm max on-resistance at 10 V gate drive and 2.4 A Id sets the conduction loss floor for a given load current. Gate charge totals 20.5 nC at 10 V, and input capacitance is 440 pF at 100 V drain bias — these two numbers define the switching energy per cycle. A driver sourcing 1 A into the gate charges it in roughly 20 ns, but the miller plateau stretches the actual switching interval; budget the full Qg for the driver's average current capability.
Full-pack isolation — no extra insulator needed
The TO-220 Full Pack (PG-TO220-3-111) moulds the backside tab in epoxy, so the drain is electrically isolated from the heatsink surface. On a bench or in a field swap, this means you can bolt it directly to a grounded chassis or shared heatsink without a sil-pad or mica washer — one less part to carry in the kit. Through-hole mounting suits point-to-point wiring and single-sided boards where a rework station is not available. The three-lead layout is standard; orientation is unambiguous with the tab facing the heatsink.
Active lifecycle, RoHS3 — no LTB pressure
Infineon lists the IPA60R600E6 as Active (current production) and RoHS3 compliant. There is no last-time-buy window to track, and no official successor to cross-reference — the part is the current offering in the CoolMOS ™ family. Operating temperature spans -55 to 150 °C junction, which covers industrial enclosures and under-hood automotive ambient without derating the headline current.