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Infineon Technologies IPA60R600C6XKSA1 — Discrete Semiconductors

Infineon IPA60R600C6XKSA1 CoolMOS N-Ch MOSFET, 600V, 7.3A

MPNIPA60R600C6XKSA1
NRND

Infineon CoolMOS™ N-channel MOSFET, 600V Vdss, 7.3A continuous drain, 600mOhm Rds(on) at 10V gate drive, TO-220-3 Full Pack (PG-TO220-FP), -55 to 150°C junction temperature.

$1.2804Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA60R600C6XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.3A (Tc)
Power dissipation28W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 200µA
Rds on (Max) @ id, vgs600mOhm @ 2.4A, 10V
Gate charge (Qg) (Max) @ vgs20.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds440 pF @ 100 V

Product details

The IPA60R600C6XKSA1 is a 600 V N-channel CoolMOS MOSFET in a TO-220-3 Full Pack package.

NRND — plan your BOM transition now

New designs should avoid the IPA60R600C6XKSA1 and instead evaluate a current-production CoolMOS or other 600 V N-channel MOSFET in a TO-220 Full Pack. For existing BOM lines already qualified to this order code, the NRND status means you have a window to secure last-time-buy inventory or validate a drop-in replacement before the part phases out. Sourcing through independent distribution is the practical channel for bridging production runs during the transition.

Gate drive and switching — not a logic-level part

The drive voltage for rated on-resistance is 10 V. Maximum gate threshold is 3.5 V at 200 µA.

Package and thermal — the isolated TO-220 advantage

The PG-TO220-FP (Full Pack) package is a fully moulded through-hole case with no exposed metal tab. Maximum power dissipation is 28 W at case temperature Tc, which is lower than a standard TO-220 because the plastic body adds thermal resistance. The trade-off is that the device is electrically isolated — no insulating washer or pad is needed between the MOSFET and the heatsink, which saves assembly cost and reduces the risk of a short through the mounting hardware.

Frequently asked questions

Is IPA60R600C6XKSA1 obsolete or NRND?

It is not yet obsolete, but Infineon has flagged it for phase-out. New designs should select a current-production alternative.

Is IPA60R600C6XKSA1 a logic-level MOSFET?

No. The maximum gate threshold voltage is 3.5 V at 200 µA, but the specified drive voltage for the rated on-resistance is 10 V. At 5 V gate drive the device will not achieve the 600 mOhm Rds(on) and may operate in the linear region. A 10 V gate drive is required.