600 V CoolMOS™ CE — when the primary-side switching transistor must survive offline transients
The IPA60R400CEXKSA1 is an Infineon CoolMOS™ CE N-channel power MOSFET built for high-voltage switched-mode power supplies. Its 600 V drain-source breakdown voltage covers the 85–265 VAC universal input range with margin for the reflected voltage and leakage inductance spike in a flyback or PFC stage.
TO-220 Full Pack — one fewer assembly step
This part ships in the TO-220 Full Pack (PG-TO220-FP) package. The fully encapsulated backside means the tab is electrically isolated — no mica insulator or sil-pad needed when bolting to a grounded heatsink.
Infineon lists the IPA60R400CEXKSA1 as Active (current product). The base product number IPA60R400 covers the broader CoolMOS CE family, so if you need a different on-resistance or current rating, the same 600 V platform and footprint options exist.