Infineon CoolMOS ™ series, N-Channel MOSFET, 600 V drain-source, 280 mOhm Rds(on) at 10 V gate drive, 13.8 A continuous drain current, TO-220-3 Full Pack, through-hole mounting.
| Parameter | Value |
|---|---|
| Series | CoolMOS E6™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 13.8A (Tc) |
| Power dissipation | 32W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 430µA |
| Rds on (Max) @ id, vgs | 280mOhm @ 6.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 43 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 950 pF @ 100 V |
The IPA60R280E6: At 6.5 A drain current and 10 V gate drive, the maximum Rds(on) is specified at 280 mOhm. The 32 W maximum power dissipation in the TO-220 Full Pack can handle this with adequate heatsinking.
For BOM lines that need a qualified second source, Infineon's CoolMOS C7 or P7 series offer pin-compatible alternatives with lower Rds(on) and faster switching, but the series remains a solid choice for cost-sensitive designs where the 280 mOhm on-resistance fits the thermal budget.
The part is listed as a standard CoolMOS device; Infineon's CoolMOS series is generally RoHS compliant, but verify the specific date code or lot against the manufacturer's compliance certificate for your procurement batch.