The Infineon IPA60R1K0CEXKSA1 is an N-channel super-junction MOSFET from the CoolMOS™ series, built for high-voltage power switching applications. The device uses Infineon's super-junction technology to achieve a low gate charge of 13 nC at 10 V, which reduces switching losses in hard-switched topologies.
1 Ohm Rds(on) — what it means for conduction loss
At 1.5 A, the I²R loss is about 2.25 W, which the 26 W power dissipation rating (at case temperature) can handle with adequate heatsinking. If your gate-drive supply is limited to 5 V, this part is not the right fit — look for a logic-level MOSFET instead.
13 nC gate charge — switching speed and driver sizing
In a 100 kHz hard-switched converter, the gate-drive power loss is roughly Qg × Vgs × fsw = 13 nC × 10 V × 100 kHz = 13 mW, which is negligible. The low input capacitance of 280 pF at 100 V Vds further reduces the drive burden. This combination of low Qg and low Ciss makes the IPA60R1K0CEXKSA1 well suited for medium-frequency flyback and PFC stages where switching losses dominate.
TO-220 Full Pack — mounting and thermal interface
The PG-TO220-FP (Full Pack) package has a fully isolated plastic body, so the mounting tab is electrically isolated from the drain. The through-hole mounting suits point-of-load and board-level power stages where wave soldering or manual insertion is the norm.