650 V CoolMOS in a fully isolated TO-220
Infineon lists the IPA60R199CPXKSA1 as Not Recommended for New Designs (NRND). The part is still available through distribution, but it is on a path toward end-of-life. For new projects, evaluate a current-production CoolMOS alternative with similar 650 V / 199 mOhm ratings in the same TO-220 Full Pack footprint.
The 43 nC typical gate charge at 10 V is moderate for a 650 V part — a standard gate driver with 1 A to 2 A peak current can switch it in the tens of nanoseconds. Input capacitance measures 1520 pF at 100 V drain-source, which gives a reasonable Miller plateau for hard-switched topologies like PFC boost or flyback converters. The 3.5 V maximum gate threshold at 1.1 mA means the device turns on cleanly with a 10 V drive, but the threshold is high enough to stay off with a 0 V gate signal even at elevated junction temperature.
