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Infineon Technologies IPA60R190E6 — Discrete Semiconductors

Infineon IPA60R190E6 CoolMOS™ N-Channel MOSFET, 600 V

MPNIPA60R190E6
Active

Infineon CoolMOS™ IPA60R190E6, N-Channel MOSFET, 600 V Vdss, 190 mOhm Rds(on) at 10 V, 20.2 A Id, 63 nC Qg, PG-TO220-3-111 full-pack, -55°C to 150°C.

$0.8003Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA60R190E6 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20.2A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 630µA
Rds on (Max) @ id, vgs190mOhm @ 9.5A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1400 pF @ 100 V

Product details

It is designed for hard-switching topologies in offline power supplies, adapters, lighting ballasts, and industrial converters where the 600 V drain-source rating provides a solid 80% derating margin on a 400 V DC bus.

Switching performance and gate drive budget

That translates to a gate-drive power of roughly Pgate = Qg × Vgs × fsw — at 100 kHz, about 63 mW, easily handled by a standard driver like the IR2110 or a bootstrap topology. If you are pushing past 200 kHz, the 63 nC Qg starts to eat into driver efficiency; consider a lower-Qg CoolMOS sibling for high-frequency LLC or PFC stages.

That means it is at home in avionics power supplies, outdoor telecom rectifiers, and downhole instrumentation where ambient can swing from arctic cold to engine-bay heat. The TO-220 Full-Pack (fully isolated tab) simplifies heatsinking — no insulating pad needed, which is a plus for field repairs. Maximum power dissipation is 34 W at case temperature, so a heatsink is mandatory above a few watts; the full-pack package has higher thermal resistance than a standard TO-220, so budget for a larger heatsink or forced air.

Frequently asked questions

What is the gate charge of IPA60R190E6?

The gate charge (Qg) is 63 nC at 10 V gate drive, which is typical for a 600 V, 190 mOhm CoolMOS device.

Is IPA60R190E6 RoHS compliant?

The evidence does not explicitly state RoHS compliance, but Infineon's CoolMOS series is generally RoHS-compliant; verify with the manufacturer's latest documentation.

What is the closest pin-compatible alternative to IPA60R190E6?

The evidence does not list a specific pin-compatible alternative. Within the CoolMOS family, Infineon offers multiple 600 V N-channel devices in the same TO-220 Full-Pack footprint with varying Rds(on) and Qg — compare the IPA60R380E6 (higher Rds(on), lower Qg) or IPA60R125P7 (lower Rds(on), higher Qg) for a different performance trade-off.