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Infineon Technologies IPA60R190C6 — Discrete Semiconductors

Infineon IPA60R190C6 CoolMOS N-Ch MOSFET, 600V, 190mOhm

MPNIPA60R190C6
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Infineon CoolMOS™ IPA60R190C6 N-Channel MOSFET, 600 V Vdss, 190 mOhm Rds(on) at 10 V, 20.2 A Id, 63 nC gate charge, TO-220-3 Full Pack, -55°C to 150°C junction temperature.

$4.0600Ref. price · indicative, final on quote
Infineon Technologies IPA60R190C6 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA60R190C6 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20.2A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 630µA
Rds on (Max) @ id, vgs190mOhm @ 9.5A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1400 pF @ 100 V

Product details

600 V CoolMOS in a full-pack TO-220 — what this means for the power stage

63 nC gate charge — sizing the gate driver

With a typical gate charge of 63 nC at 10 V, this MOSFET needs a driver that can source and sink that charge fast enough to hit your switching frequency target. At 100 kHz the average gate-drive current works out to about 6.3 mA, but the peak current the driver must deliver during the Miller plateau is what sets the switching loss.

The 34 W power dissipation at the case (Tc) is the thermal ceiling; with the full-pack's junction-to-case thermal resistance, a real-world design derates that to about 15 W to 20 W continuous in a 50°C ambient with a reasonable heatsink. The 3.5 V maximum gate threshold at 630 µA drain current is a standard logic-level threshold — the part is fully enhanced at 10 V drive as specified.

Frequently asked questions

What is the replacement or equivalent for IPA60R190C6?

Within the CoolMOS C6 family, parts with different on-resistance or current ratings (e.g., IPA60R099C6, IPA60R125C6) share the same PG-TO220-3-111 footprint but differ in Rds(on) and current capability. The closest parametric sibling would be the IPA60R199CP, which has a slightly higher 199 mOhm Rds(on) and is from the older CoolMOS CP series — not a pin-compatible drop-in without checking the gate charge and switching behavior.

Can I use IPA60R190C6 in a power supply?

Yes, the 600 V Vdss and 190 mOhm Rds(on) make it a standard choice for the primary-side switch in offline flyback and forward converters, PFC boost stages, and LLC resonant converters. The full-pack isolation simplifies heatsink mounting in enclosed power-supply housings.