The Infineon IPA60R180P7XKSA1 is an N-channel enhancement-mode MOSFET from the CoolMOS P7 series, rated for 650 V drain-source voltage and 18 A continuous drain current at 25 °C case temperature. The 180 mOhm maximum on-resistance is specified at 5.6 A drain current with a 10 V gate drive. This MOSFET is designed for hard-switching topologies such as flyback, PFC boost, and LLC converters operating from a 400 VDC bus, as well as for motor-drive inverters and auxiliary power supplies in industrial and automotive auxiliary equipment.
At 5.6 A, conduction loss is under 5.6 W at 25 °C junction temperature, which the 26 W package power dissipation can handle with an appropriate heatsink. Input capacitance is 1081 pF at 400 V drain-source bias, which influences the switching speed and the driver's peak current requirement.
ROHS3 compliance is confirmed. For current-production builds, this part can be specified without obsolescence risk.
