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Infineon Technologies IPA60R180C7XKSA1 — Discrete Semiconductors

Infineon IPA60R180C7XKSA1 CoolMOS C7 N-Ch 600V 9A TO-220FP

MPNIPA60R180C7XKSA1
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Infineon CoolMOS™ C7 series, N-Channel MOSFET, 600V Vdss, 180mOhm Rds(on) @ 10V, 9A Id, 24nC Qg, TO-220-3 Full Pack, -55°C to 150°C.

$3.7000Ref. price · indicative, final on quote
Infineon Technologies IPA60R180C7XKSA1 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA60R180C7XKSA1 specifications
ParameterValue
SeriesCoolMOS™ C7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation29W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 260µA
Rds on (Max) @ id, vgs180mOhm @ 5.3A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1080 pF @ 400 V

Product details

The IPA60R180C7XKSA1: The 1080 pF input capacitance at 400 V is light enough that the Miller plateau does not dominate the turn-on edge, which helps keep EMI in check without excessive gate resistance.

The base product number IPA60R covers a range of voltage and Rds(on) variants in the same C7 family, so if a future redesign needs a lower Rds(on) or higher current rating, the footprint and gate-drive voltage stay compatible.

Gate drive and switching — the 10 V anchor

That 10 V is the standard drive level for a MOSFET driver or a bootstrap supply from the converter's auxiliary winding. The gate charge of 24 nC at 10 V means a typical driver with 1 A peak source/sink capability will switch the device in the tens of nanoseconds range. The threshold voltage max is 4 V at 260 µA, so a 5 V logic-level gate drive will not fully enhance the channel — plan for a 10 V rail or a dedicated driver with a charge-pump stage if the controller only outputs 5 V.

Thermal and current — the TO-220 Full Pack limits

The TO-220 Full Pack (fully isolated plastic package) has higher thermal resistance than a standard TO-220 with a metal tab, so the 9 A figure assumes a well-ventilated heatsink or forced airflow. In a real 85°C ambient inside a power supply, derate the current to roughly 5–6 A continuous to stay inside the junction temperature limit of 150°C.

Frequently asked questions

Can IPA60R180C7XKSA1 replace IPA60R180C6?

The IPA60R180C7XKSA1 is the CoolMOS C7 generation successor to the earlier C6 series part IPA60R180C6. Both are 600 V, 180 mOhm N-channel MOSFETs in the same TO-220 Full Pack footprint. The C7 generation typically offers lower gate charge and improved switching performance, so it is a drop-in replacement electrically and mechanically. Verify the gate-drive circuit — the C7 part still uses 10 V gate drive — and check that the slightly different input capacitance does not shift the switching edge timing outside your dead-time budget.

What is the recommended Vgs drive voltage for IPA60R180C7XKSA1?

For minimum conduction loss, drive the gate with 10 V to 12 V. A 5 V logic-level signal will not fully enhance the channel — the threshold voltage max is 4 V at 260 µA, so the device would operate in the linear region with high dissipation.

Does IPA60R180C7XKSA1 come in tape and reel packaging?

The listed packaging for this order code is Tube, not Tape & Reel. The TO-220 Full Pack through-hole package is typically shipped in tubes for manual or wave-solder assembly. If your line requires Tape & Reel for automated insertion, check the Infineon ordering codes for the same device in a surface-mount DPAK or D2PAK variant.