600 V N-channel MOSFET in the CoolMOS P6 family
The IPA60R125P6XKSA1: The full-pack (isolated tab) construction simplifies heatsinking by eliminating the need for an insulating pad in grounded-tab designs. Typical applications include hard-switching and resonant topologies in power supplies, PFC stages, and industrial power converters where 600 V blocking and moderate conduction loss are required.
The 56 nC typical gate charge at 10 V is a mid-range figure — not the lowest for fast switching, but low enough that a standard gate driver (1–2 A peak) can switch it cleanly at 50–100 kHz without excessive driver dissipation. Input capacitance measures 2660 pF at 100 V drain-source, which sets the switching energy and drive current budget. For a 100 kHz LLC or PFC stage, the 56 nC Qg means the driver sees about 5.6 mA average gate current per MHz of switching frequency — a figure that fits within most controller IC drive capabilities.
PG-TO220-FP full-pack — mounting and thermal notes
The PG-TO220-FP (full-pack) package has an isolated tab, so the mounting hole and heatsink are electrically floating — no mica washer or sil-pad needed. Maximum power dissipation is 34 W at case temperature, limited by the junction-to-case thermal path through the mould compound. For continuous operation above 20 A, a heatsink with forced airflow is expected; the 30 A rating assumes Tc = 25°C and drops linearly with case temperature. The through-hole leads suit wave-solder or hand-solder assembly; store the reels dry per MSL 1 (no moisture sensitivity bake required).
The base product number IPA60R covers a range of Rds(on) options in the same package, so if a lower or higher on-resistance variant is needed later, the footprint and gate drive requirements are consistent across the family.