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Infineon Technologies IPA60R060P7XKSA1 — Discrete Semiconductors

Infineon IPA60R060P7XKSA1 CoolMOS P7 N-Channel MOSFET, 600V

MPNIPA60R060P7XKSA1
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Infineon CoolMOS™ P7 series, IPA60R060P7XKSA1, N-Channel MOSFET, 600 V Vdss, 60 mOhm Rds(on) @ 15.9 A, 10 V, 48 A continuous drain, 67 nC gate charge, PG-TO220-FP, -55°C to 150°C junction temperature.

$6.5600Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA60R060P7XKSA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C48A (Tc)
Power dissipation29W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 800µA
Rds on (Max) @ id, vgs60mOhm @ 15.9A, 10V
Gate charge (Qg) (Max) @ vgs67 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2895 pF @ 400 V

Product details

600 V, 60 mΩ — the conduction-loss anchor for a high-voltage rail

The IPA60R060P7XKSA1: That 60 mΩ figure is the number a power-stage designer reaches for first: it sets the conduction loss at a given load current, and at 48 A continuous drain current (rated at a 25°C case temperature) this part can handle the primary-side switch in a several-hundred-watt offline supply or a high-voltage DC-DC converter.

Gate charge and switching — sizing the driver and estimating losses

Input capacitance is 2895 pF at 400 V drain-source.

The maximum power dissipation of 29 W at the case temperature is a package-limited figure; the TO-220 Full Pack's thermal resistance is higher than a standard TO-220 because the plastic encapsulates the back of the die, but the trade-off is the electrically isolated tab. A designer should derate the continuous current from the 48 A at 25°C case temperature down to roughly 30 A at 100°C case temperature, following the typical derating curve for this package class.

For a production BOM that needs this 600 V, 60 mΩ CoolMOS P7 device, the supply outlook is stable through standard distribution.

Frequently asked questions

What are the specifications of IPA60R060P7XKSA1?

It comes in a PG-TO220-FP full-pack through-hole package.

What is the Rds(on) of IPA60R060P7XKSA1?

The maximum Rds(on) is 60 mΩ at a 10 V gate drive with 15.9 A of drain current. This is the headline on-resistance spec for conduction loss calculations in a switching power supply.