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Infineon Technologies IPA50R950CEXKSA2 — Discrete Semiconductors

Infineon IPA50R950CEXKSA2 CoolMOS CE N-Ch 500V 3.7A MOSFET

MPNIPA50R950CEXKSA2
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Infineon CoolMOS™ CE series, IPA50R950CEXKSA2, N-Channel 500 V, 3.7 A, 950 mOhm, TO-220-3 Full Pack, Through Hole, MOSFET.

$0.9200Ref. price · indicative, final on quote
Infineon Technologies IPA50R950CEXKSA2 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA50R950CEXKSA2 specifications
ParameterValue
SeriesCoolMOS™ CE
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C3.7A (Tc)
Power dissipation25.7W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 100µA
Rds on (Max) @ id, vgs950mOhm @ 1.2A, 13V
Gate charge (Qg) (Max) @ vgs10.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds231 pF @ 100 V

Product details

500 V N-channel in a thermally isolated package

Its 950 mOhm maximum on-resistance is specified at 1.2 A with a 13 V gate drive, which is the typical operating point for this device.

Switching losses and drive requirements

With a gate charge of 10.5 nC at 10 V, this part keeps the gate-drive energy low, which directly reduces losses in the driver stage and lets you push switching frequency higher than a higher-Qg part would allow. Input capacitance measures 231 pF at 100 V drain-source, confirming the light capacitive load.

Thermal budget for the full-pack design

Maximum power dissipation is 25.7 W at case temperature, but the Full Pack's higher thermal resistance means the junction-to-case path is the limiting factor — derate aggressively if the heatsink is small or airflow is restricted.

The part is in the CoolMOS CE series, a mainstream high-voltage MOSFET family with broad availability through independent distribution.

Frequently asked questions

Where can I buy IPA50R950CEXKSA2 and get a price?

The IPA50R950CEXKSA2 is available to order through independent distribution.

What is the RDS(on) of IPA50R950CEXKSA2?

The maximum on-resistance is 950 mOhm, specified at a drain current of 1.2 A and a gate-source voltage of 13 V.

What is the maximum power dissipation of IPA50R950CEXKSA2?

The maximum power dissipation is 25.7 W at case temperature.

Can IPA50R950CEXKSA2 be used as a replacement for IPA50R950CP?

The IPA50R950CP is a prior-generation CoolMOS part with the same 500 V / 950 mOhm rating and TO-220 Full Pack package. The CE series is the current mainstream successor, so the IPA50R950CEXKSA2 is the direct pin-compatible replacement for the IPA50R950CP in new builds.