500 V, 5 A, 800 mΩ — CoolMOS™ N-channel in full-pack TO-220
The Infineon IPA50R800CE is a 500 V N-channel CoolMOS™ power MOSFET in a PG-TO220-FP full-pack through-hole package. It delivers a continuous drain current of 5 A at 25°C case temperature, with a maximum Rds(on) of 800 mOhm at 1.5 A and 13 V gate drive. The full-pack (isolated) tab eliminates the need for a mica insulator or thermal pad, simplifying assembly and reducing BOM cost in through-hole power stages.
12.4 nC gate charge — low drive burden for moderate-frequency switching
With a typical gate charge of 12.4 nC at 10 V, the IPA50R800CE places a light load on the gate-drive circuit. This keeps switching losses manageable in flyback converters, PFC boost stages, and auxiliary power supplies operating in the 50–150 kHz range. The low Qg also allows the use of a smaller, cheaper gate-drive transformer or bootstrap driver.