The Infineon IPA50R650CEZKSA2 is an N-channel CoolMOS power MOSFET in a PG-TO220 Full Pack through-hole package. It is built for offline switched-mode power supplies, PFC boost stages, flyback converters, and auxiliary power rails where 500 V drain-source blocking and 9 A continuous drain current are needed. The full-pack (isolated) tab simplifies heatsinking — no insulating washer required, which speeds assembly and improves thermal coupling to the heatsink. Rds(on) is specified at 650 mOhm maximum with 13 V gate drive at 1.8 A. That 650 mOhm is the worst-case ceiling at the rated current and temperature; typical values will be lower, but for worst-case conduction-loss budgeting use the 650 mOhm figure. Power dissipation is rated at 27.2 W at case temperature — that assumes good thermal contact to the heatsink through the full-pack tab.
Infineon IPA50R650CEZKSA2 CoolMOS N-Ch 500V 9A TO-220 Full
MPNIPA50R650CEZKSA2
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Infineon CoolMOS™ N-Channel MOSFET, 500 V Vdss, 9 A Id, 650 mOhm Rds(on) max at 13 V gate drive, 15 nC Qg, TO-220-3 Full Pack, Through Hole, -40°C to 150°C Tj.
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 13V |
| Current - continuous drain (Id) @ 25°C | 9A (Ta) |
| Power dissipation | 27.2W (Tc) |
| Operating temperature | -40°C~150°C(TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 150µA |
| Rds on (Max) @ id, vgs | 650mOhm @ 1.8A, 13V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 342 pF @ 100 V |
Product details
Frequently asked questions
Is IPA50R650CEZKSA2 RoHS compliant?
The IPA50R650CEZKSA2 is listed as RoHS compliant. The specific RoHS certificate or declaration can be provided with the order documentation.