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Infineon Technologies IPA50R650CEXKSA2 — Discrete Semiconductors

Infineon IPA50R650CEXKSA2 CoolMOS CE N-Ch MOSFET, 500 V

MPNIPA50R650CEXKSA2
Obsolete

Infineon CoolMOS™ CE series IPA50R650CEXKSA2, N-channel MOSFET, 500 V drain-source voltage, 650 mOhm max Rds(on) at 13 V gate drive, 4.6 A continuous drain current, through-hole TO-220-3 Full Pack package, –40 to 150 °C junction temperature.

$0.3200Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA50R650CEXKSA2 specifications
ParameterValue
SeriesCoolMOS™ CE
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C4.6A (Tc)
Power dissipation27.2W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 150µA
Rds on (Max) @ id, vgs650mOhm @ 1.8A, 13V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds342 pF @ 100 V

Product details

At 1.8 A Id the 650 mOhm maximum on-resistance produces about 2.1 W conduction loss at the top of the temperature range — a number to feed into the thermal budget against the 27.2 W power dissipation limit at the case. Gate charge is 15 nC at 10 V, which is modest for a 500 V device and keeps the driver burden low in medium-frequency hard-switching designs. Input capacitance of 342 pF at 100 V Vds is a figure that governs switching speed and driver sizing — lower capacitance means faster edges and less cross-conduction loss, but also tighter layout to keep ringing under control.

Obsolete — sourcing path for the BOM line

Frequently asked questions

What replaces IPA50R650CEXKSA2?

No official replacement order code is recorded on this listing. A replacement would need to match the 500 V Vdss, 650 mOhm max Rds(on), 4.6 A Id rating, and the TO-220 Full Pack package. A same-series CoolMOS CE part with similar ratings may be a candidate, but pin compatibility and electrical fit must be verified against the original datasheet.

What is the Rds(on) of IPA50R650CEXKSA2?

The maximum on-resistance is 650 mOhm at 1.8 A drain current with a 13 V gate drive. This is the worst-case value across operating temperature; typical values are lower.