The Infineon IPA50R650CE is a 500 V N-channel CoolMOS power MOSFET in a PG-TO220-FP full-pack through-hole package. It is designed for hard-switching topologies such as flyback and PFC stages in off-line AC-DC converters, where the 650 mOhm typical on-resistance and 15 nC gate charge keep conduction and switching losses manageable at moderate power levels.
The 500 V drain-source voltage rating (Vdss) places this part in the 500 V class, suitable for bulk-capacitor voltages in universal-input (85–265 VAC) offline supplies with adequate derating for switching transients. The 650 mOhm Rds(on) is specified at 1.8 A drain current with a 13 V gate drive — note that the drive voltage is 13 V, not the more common 10 V; a gate-drive supply of at least 13 V is needed to achieve the rated on-resistance. The 27.2 W power dissipation limit at case temperature sets the thermal budget — a heatsink with adequate thermal resistance is required for any continuous load above a few watts. Gate charge of 15 nC at 10 V is low, enabling fast switching transitions and reducing gate-drive losses in high-frequency converters. Input capacitance of 342 pF at 100 V Vds is moderate, keeping driver loading light.
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