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Infineon Technologies IPA50R520CP — Discrete Semiconductors

Infineon IPA50R520CP CoolMOS N-Ch MOSFET, 500V 7.1A TO-220FP

MPNIPA50R520CP
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Infineon CoolMOS™ IPA50R520CP N-channel MOSFET, 500 V drain-source voltage, 7.1 A continuous drain current, 520 mOhm on-resistance, TO-220-3 Full Pack package, -55°C to 150°C junction temperature.

Infineon Technologies IPA50R520CP datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA50R520CP specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.1A (Tc)
Power dissipation66W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 250µA
Rds on (Max) @ id, vgs520mOhm @ 3.8A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds680 pF @ 100 V

Product details

500 V / 7.1 A CoolMOS N-channel in a full-pack TO-220

This simplifies mounting and improves thermal contact in designs where the heatsink is chassis-grounded or shared across multiple devices.

That's the figure to use for worst-case conduction loss calculations at rated current. The drive voltage requirement is 10 V for the lowest Rds(on); if your gate drive rail is lower, expect the on-resistance to climb — check the typical curve in the datasheet.

Full-pack package: no insulator, direct-to-heatsink mount

The TO-220 Full Pack (PG-TO220-3-31) has the die mounted on an isolated leadframe, so the exposed backside tab is electrically neutral. That saves assembly time and improves thermal transfer — the junction-to-case thermal path is direct. Maximum power dissipation is 66 W at case temperature, so a decent heatsink is needed for continuous high-current operation.

Input capacitance is 680 pF at 100 V drain-source, which is low enough that the gate driver doesn't need to be a high-current beast. Gate-source voltage is limited to ±20 V absolute maximum — stay within that to avoid oxide rupture. The device is avalanche rated for single-pulse events, though the spec table doesn't give a numeric EAS value here.

There is no last-time-buy risk for ongoing designs.

Frequently asked questions

What is the Vds and Id rating of IPA50R520CP?

The drain-to-source voltage rating (Vdss) is 500 V, and the continuous drain current (Id) at 25°C case temperature is 7.1 A.

What is the Rds(on) of IPA50R520CP?

Maximum on-resistance is 520 mOhm at 3.8 A drain current with 10 V gate drive.

What is the closest pin-compatible alternative to IPA50R520CP?

The evidence does not list a specific pin-compatible alternative from Infineon or another manufacturer. For a cross-reference, compare Rds(on), gate charge, and package dimensions against other CoolMOS 500 V N-channel devices in TO-220 Full Pack.