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Infineon Technologies IPA50R399CPXKSA1 — Discrete Semiconductors

Infineon IPA50R399CPXKSA1 CoolMOS N-Channel MOSFET, 500 V

MPNIPA50R399CPXKSA1
Obsolete

Infineon CoolMOS™ N-channel MOSFET, IPA50R399CPXKSA1, 500 V drain-source, 9 A continuous drain current, 399 mOhm on-resistance at 10 V gate drive, TO-220-3 Full Pack, -55°C to 150°C junction temperature.

Infineon Technologies IPA50R399CPXKSA1 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA50R399CPXKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation83W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 330µA
Rds on (Max) @ id, vgs399mOhm @ 4.9A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds890 pF @ 100 V

Product details

Infineon lists the IPA50R399CPXKSA1 as obsolete. New designs should target an active CoolMOS or competing 500 V MOSFET with similar Rds(on) and gate charge to avoid a future last-time-buy scramble.

The 500 V drain-source voltage (Vdss) covers the typical 400 V DC bus in single-phase PFC stages with margin for switching overshoot. The 399 mOhm on-resistance at 4.9 A and 10 V is the conduction loss reference; at full 9 A current, the Rds(on) will be higher due to self-heating, so efficiency calculations should use the typical Rds(on) at the operating junction temperature.

Frequently asked questions

What is the replacement for IPA50R399CPXKSA1?

Infineon does not list an official successor for the IPA50R399CPXKSA1. A replacement must be qualified against the 500 V drain-source, 9 A continuous drain current, 399 mOhm on-resistance, and TO-220-3 Full Pack footprint. Candidates include later CoolMOS generations or competing 500 V MOSFETs with similar Rds(on) and gate charge.