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Infineon Technologies IPA50R380CEXKSA2 — Discrete Semiconductors

Infineon IPA50R380CEXKSA2 CoolMOS CE N-Ch MOSFET, 500V

MPNIPA50R380CEXKSA2
Active

Infineon CoolMOS™ CE series N-channel MOSFET, 500 V drain-source, 380 mOhm Rds(on) at 3.2 A, 13 V, 6.3 A continuous drain current, TO-220-3 Full Pack through-hole package, -40°C to 150°C junction temperature.

$1.2000Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA50R380CEXKSA2 specifications
ParameterValue
SeriesCoolMOS™ CE
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C6.3A (Tc)
Power dissipation29.2W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 260µA
Rds on (Max) @ id, vgs380mOhm @ 3.2A, 13V
Gate charge (Qg) (Max) @ vgs24.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds584 pF @ 100 V

Product details

The IPA50R380CEXKSA2: The 380 mOhm maximum on-resistance at 3.2 A and 13 V gate drive determines conduction loss in the on-state. This translates to manageable switching losses in hard-switched topologies at frequencies up to the 100 kHz range, and a gate-drive circuit capable of sourcing a few hundred milliamps will handle the transition cleanly. Input capacitance (Ciss) is 584 pF at 100 V drain-source, a relatively low value that keeps the Miller plateau short and reduces the drive power needed.

Package and mounting — TO-220 Full Pack

The PG-TO220-3-FP (Full Pack) package has three through-hole leads and a fully isolated backside tab. No additional isolation pad is required when mounting to a heatsink, which reduces assembly steps and thermal resistance. Maximum power dissipation is 29.2 W at case temperature, limited by the junction-to-case thermal path. The through-hole mounting suits wave-solder or hand-solder assembly in prototype runs, rework, and low-to-medium volume production.

Frequently asked questions

What is the Rds(on) of IPA50R380CEXKSA2?

Maximum on-resistance is 380 mOhm at a drain current of 3.2 A and a gate-source voltage of 13 V.

Can IPA50R380CEXKSA2 be used in high-voltage switching applications?

Yes. The 500 V drain-to-source voltage rating and CoolMOS CE technology make it suitable for high-voltage switching stages such as PFC, flyback, and SMPS designs.