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Infineon Technologies IPA50R299CPXKSA1 — Discrete Semiconductors

IPA50R299CPXKSA1 CoolMOS™ N-Channel MOSFET, 550 V, 12 A

MPNIPA50R299CPXKSA1
Obsolete

Infineon CoolMOS™ IPA50R299CPXKSA1 N-channel MOSFET, 550 V drain-source voltage, 12 A continuous drain current, 299 mOhm on-resistance at 10 V gate drive, TO-220-3 Full Pack package.

$0.8800Ref. price · indicative, final on quote
Infineon Technologies IPA50R299CPXKSA1 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA50R299CPXKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage550 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation104W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 440µA
Rds on (Max) @ id, vgs299mOhm @ 6.6A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1190 pF @ 100 V

Product details

What this CoolMOS™ MOSFET brings to the switching stage

Its 550 V drain-source breakdown voltage and 12 A continuous drain rating place it in the sweet spot for power supplies, lighting ballasts, and industrial converters where efficiency and reliability matter.

The 550 V Vdss gives you headroom for rectified mains up to 400 VDC with margin for transients.

If you have an existing BOM that calls it out, the procurement path is to source from brokers or stockists who hold remaining inventory.

Because production has ended, the IPA50R299CPXKSA1 is sourced on a quoted-to-order basis through independent distribution.

Frequently asked questions

What is the closest pin-compatible alternative to IPA50R299CPXKSA1?

Infineon does not list a direct successor for this order code. For new designs, consider current CoolMOS™ CP or C7 series parts in the same TO-220 Full Pack package with similar voltage and current ratings — check the parametric table for Rds(on) and gate charge trade-offs.