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Infineon Technologies IPA50R299CP — Discrete Semiconductors

Infineon IPA50R299CP CoolMOS™ N-Channel MOSFET, 500V, 12A

MPNIPA50R299CP
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Infineon CoolMOS™ IPA50R299CP, N-Channel MOSFET, 500 V Vdss, 12 A Id, 299 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, Through Hole, -55°C to 150°C.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA50R299CP specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation104W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 440µA
Rds on (Max) @ id, vgs299mOhm @ 6.6A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1190 pF @ 100 V

Product details

500 V CoolMOS™ in a fully isolated TO-220

The 500 V Vdss gives 80% derating margin on a typical 380 V PFC rail, which is comfortable for most industrial mains-fed designs. The 299 mOhm Rds(on) at 10 V gate drive means at 6.6 A (the test current) conduction loss is about 13 W — within the 104 W package limit, but the junction will climb fast if the switching frequency pushes core loss high. The 12 A continuous rating is at Tc=25°C — derate to about 7.5 A at 100°C case temperature using the typical thermal derating curve.

Frequently asked questions

What is the Rds(on) of IPA50R299CP?

This is the figure to use for worst-case conduction loss calculations in the power stage.