500 V super-junction MOSFET for high-voltage switching stages
The Infineon IPA50R190CE is a CoolMOS™ series N-channel super-junction MOSFET rated for 500 V drain-source breakdown and 190 mOhm maximum on-resistance at 6.2 A with a 13 V gate drive. Gate charge is 47.2 nC at 10 V, and input capacitance is 1137 pF at 100 V drain-source.
If your design can tolerate a parametric alternative, a same-series CoolMOS™ part with similar voltage and on-resistance may be considered — but there is no pin-compatible drop-in designated by Infineon.
190 mOhm Rds(on) and 13 V gate-drive requirement
At lower gate voltages the resistance rises significantly — the 3.5 V threshold (max at 510 µA) is not a logic-level turn-on; this part expects a dedicated 10–13 V gate-drive rail.
TO-220 Full Pack — isolated tab, no extra hardware
The PG-TO220-FP (Full Pack) package has the backside tab fully encapsulated in epoxy, electrically isolating it from the die. The trade-off is higher thermal resistance compared to a standard TO-220 with an exposed metal tab; the 32 W power dissipation limit reflects that. For designs pushing near that ceiling, ensure adequate airflow or a larger heatsink.