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Infineon Technologies IPA50R140CPXKSA1 — Discrete Semiconductors

Infineon IPA50R140CPXKSA1 CoolMOS N-Ch MOSFET, 500V, 140mOhm

MPNIPA50R140CPXKSA1
NRND

Infineon CoolMOS™ IPA50R140CPXKSA1, N-Channel MOSFET, 500 V Vdss, 140 mOhm Rds(on) at 10 V, 23 A continuous drain, 64 nC gate charge, TO-220-3 Full Pack, -55°C to 150°C junction temperature.

$6.2400Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA50R140CPXKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C23A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 930µA
Rds on (Max) @ id, vgs140mOhm @ 14A, 10V
Gate charge (Qg) (Max) @ vgs64 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2540 pF @ 100 V

Product details

The Infineon IPA50R140CPXKSA1 is an N-channel CoolMOS™ power MOSFET in a through-hole TO-220-3 Full Pack package.

NRND — plan your next BOM revision now

Infineon lists the IPA50R140CPXKSA1 as Not Recommended for New Designs (NRND). That means it's still available for existing production runs but won't be qualified into new projects.

140 mOhm Rds(on) and 64 nC gate charge — sizing the driver and heatsink

Through-hole full-pack — no insulator needed

The PG-TO220-3-31 supplier package is the full-pack (isolated) variant. That saves assembly time and improves thermal resistance compared to a standard TO-220 with an insulator. The three through-hole leads are on 2.54 mm pitch, standard for perfboard or PCB layout.

Frequently asked questions

What is the Rds(on) of IPA50R140CPXKSA1?

At lower gate voltages the Rds(on) will be higher — the datasheet typical curve shows roughly double at 4.5 V.