100 V, 28 A N-Channel in a fully isolated TO-220FP
The Infineon IPA180N10N3GXKSA1 is a 100 V, 28 A N-channel MOSFET from the OptiMOS™ family, housed in a TO-220-3 Full Pack (PG-TO220-FP) through-hole package.
The IPA180N10N3GXKSA1 carries an official lifecycle status of Obsolete. Infineon no longer manufactures this part, so new-production buys go through independent distribution and surplus inventory channels. There is no listed official successor order code in the record, so a direct pin-compatible drop-in from Infineon's current portfolio is not confirmed here.
At 10 V the gate charge is 25 nC, which keeps switching losses moderate in the 50–200 kHz range. The input capacitance is 1800 pF at 50 V Vds — a typical figure for this current class, meaning the gate driver doesn't need to be oversized. The 30 W power dissipation limit (at case temperature) sets the thermal budget; with the full-pack construction, the junction-to-case thermal path goes through the exposed tab, so a well-ventilated or actively cooled heatsink is expected for continuous 28 A operation.
The 100 V Vdss gives headroom for 48 V bus systems (nominal plus transients) and 60 V battery stacks. The ±20 V maximum gate-source voltage is standard for logic-level gate drive ICs, but the 3.5 V gate threshold at 35 µA means the device is fully enhanced by 10 V drive, not by 3.3 V logic — plan for a proper gate driver stage.