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Infineon Technologies IPA180N10N3G — Discrete Semiconductors

IPA180N10N3G Infineon IPA180N10N10N3G N-Channel MOSFET

MPNIPA180N10N3G
Active

Infineon OptiMOS™ 3 N-channel MOSFET, IPA180N10N3G, 100 V drain-source, 28 A continuous drain, 18 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, through-hole.

$0.6900Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA180N10N3G specifications
ParameterValue
SeriesOptiMOS™ 3
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C28A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 35µA
Rds on (Max) @ id, vgs18mOhm @ 28A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 50 V

Product details

18 mOhm at 10 V — conduction loss anchor

The IPA180N10N3G: Its on-resistance of 18 mOhm at 10 V gate drive sets the conduction loss floor for the design — at 28 A the I²R loss is roughly 14 W, which the 30 W power dissipation rating must absorb through the TO-220 Full Pack tab to a heatsink.

Through-hole TO-220 Full Pack — isolated tab, no extra insulator

The through-hole leads suit wave-solder assembly and hand-prototyping. The mounting hole pattern matches standard TO-220 clip or screw retention.

Gate charge and input capacitance — switching speed budget

The 6 V / 10 V drive voltage window means the device reaches its minimum Rds(on) at 10 V but can be driven from a 6 V rail with a small on-resistance penalty.

Active production — no last-time-buy risk

Infineon lists the IPA180N10N3G as Active.

Frequently asked questions

Is the IPA180N10N3G a through-hole or SMD part?

Through-hole — the package is TO-220-3 Full Pack with through-hole leads.