The Infineon IPA126N10N3GXKSA1 is an N-channel enhancement-mode MOSFET from the OptiMOS series. This part was designed for hard-switching DC-DC converters, motor control bridges, and power supply OR-ing stages where 100 V blocking and low conduction loss are required.
The 100 V Vdss rating means this MOSFET can block up to 100 V between drain and source, making it suitable for 48 V bus architectures, 24 V systems with headroom, and 12 V automotive rails where load-dump transients can exceed 40 V. The 12.6 mOhm Rds(on) at 10 V gate drive is the conduction loss spec: at 35 A, expect about 15.4 W dissipation just from channel resistance, which eats nearly half the 33 W budget before switching losses.
Infineon lists the IPA126N10N3GXKSA1 as Obsolete. For a BOM line that calls out this exact number, the only channel is the surplus and independent-distribution market — last-time-buy stock already in the pipeline, broker inventory, or new-old-stock from remaining shelf.