80 V N-channel in a full-pack TO-220 — what this MOSFET brings
The Infineon IPA100N08N3GXKSA1 is an 80 V, 40 A N-channel MOSFET from the OptiMOS™ family, built on a metal-oxide semiconductor process. It comes in the PG-TO220-FP full-pack package, which means the back of the tab is electrically isolated — no separate insulating washer or thermal pad needed when bolting it to a heatsink.
Where the 80 V and 40 A ratings land in a real BOM
The 80 V drain-source voltage gives about 33 % headroom on a nominal 48 V bus and comfortable margin on 24 V or 36 V battery systems. The 40 A continuous drain current is specified at a 25 °C case temperature — at an 85 °C case the actual usable current will be lower, dictated by the 35 W power dissipation ceiling and the thermal resistance of whatever heatsink you attach. The 10 mOhm Rds(on) at 10 V gate drive is the number to use for conduction loss estimates; the drive voltage range of 6 V to 10 V means it will turn on hard with standard 10 V gate drive, but at 6 V the on-resistance will be higher than the 10 mOhm max listed.
Temperature range and the full-pack thermal path
The trade-off is that the full-pack construction has higher thermal resistance than a standard TO-220 with an exposed metal tab, so the 35 W dissipation limit is the hard ceiling — size the heatsink accordingly.
Infineon lists the IPA100N08N3GXKSA1 as obsolete. Sourcing this part now means going through independent distribution or the surplus market, where availability is limited to existing stockpiles. Any BOM line using this part should be qualified for a replacement or secured through a broker channel while inventory remains.