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Infineon Technologies IPA057N06N3GXKSA1 — Discrete Semiconductors

Infineon IPA057N06N3GXKSA1 N-Channel MOSFET, 60V, 60A

MPNIPA057N06N3GXKSA1
NRND

Infineon OptiMOS™ N-Channel MOSFET, 60 V Vdss, 60 A continuous drain, 5.7 mOhm Rds(on) at 10 V gate drive, TO-220 Full Pack (PG-TO220-3-31), -55 to 175 °C junction temperature.

$2.4800Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA057N06N3GXKSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation38W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 58µA
Rds on (Max) @ id, vgs5.7mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs82 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6600 pF @ 30 V

Product details

OptiMOS N-channel in a fully isolated TO-220

The Infineon IPA057N06N3GXKSA1 is an N-channel MOSFET from the OptiMOS series, with 60 V drain-to-source voltage and 60 A continuous drain current.

60 A, 5.7 mOhm — what the headline ratings mean for the switching design

Continuous drain current is rated 60 A at 25 °C case temperature, with a maximum Rds(on) of 5.7 mOhm at 60 A with 10 V gate drive. That on-resistance is the figure that governs conduction loss in a buck converter, motor drive, or load switch — at 60 A, expect roughly 20 W of dissipation in the channel alone, which the 38 W package power limit (at case temperature) can handle with adequate heatsinking.

Temperature grade: -55 to 175 °C junction

The part is NRND — available for existing production but not recommended for new designs.

Frequently asked questions

What is the closest pin-compatible alternative to IPA057N06N3GXKSA1?

A direct pin-compatible replacement would be another 60 V N-channel OptiMOS MOSFET in the TO-220 Full Pack (PG-TO220-3-31) with similar Rds(on) and gate charge. Infineon's current-generation OptiMOS 5 or StrongIRFET families offer parts with the same footprint and improved performance — check the IPA057N06N3GXKSA1 datasheet for the latest cross-reference list, or consult an Infineon field application engineer for a specific recommended replacement.

Can IPA057N06N3GXKSA1 be used as a replacement for IRFZ44N?

The IRFZ44N is a 55 V, 49 A N-channel MOSFET in a TO-220 package (non-isolated). The IPA057N06N3GXKSA1 has a higher voltage rating (60 V), higher current (60 A), and lower Rds(on) (5.7 mOhm vs typically 17.5 mOhm for the IRFZ44N), so it is electrically a superior replacement in most switching applications. However, the IPA057N06N3GXKSA1 uses a fully isolated TO-220 Full Pack — the tab is not electrically connected to the drain, unlike the standard TO-220 of the IRFZ44N. If the original design relied on the tab being at drain potential (e.g., for a common-drain heatsink arrangement), the isolat