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Infineon Technologies IPA030N10NF2SXKSA1 — Discrete Semiconductors

Infineon IPA030N10NF2SXKSA1 N-Channel MOSFET, 100V 83A 3mOhm

MPNIPA030N10NF2SXKSA1
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Infineon StrongIRFET™ 2, N-Channel MOSFET, 100V Drain-Source, 83A Continuous Drain, 3mOhm Rds(on) at 50A 10V, TO-220-3 Full Pack, Through Hole, -55°C to 175°C.

$4.6100Ref. price · indicative, final on quote
Infineon Technologies IPA030N10NF2SXKSA1 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA030N10NF2SXKSA1 specifications
ParameterValue
SeriesStrongIRFET™ 2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C83A (Tc)
Power dissipation41W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.8V @ 169µA
Rds on (Max) @ id, vgs3mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs154 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7300 pF @ 50 V

Product details

What this N-channel MOSFET brings to a power stage

The Infineon IPA030N10NF2SXKSA1 is a 100 V, 83 A N-channel MOSFET from the StrongIRFET™ 2 series, built on a metal-oxide planar technology.

Gate charge (Qg) is 154 nC at 10 V. Input capacitance (Ciss) is 7300 pF at 50 V drain-source.

Package and thermal — the Full Pack advantage

The TO-220 Full Pack is a fully isolated plastic package. The tab is not electrically connected to the drain, so no mica washer or silicone pad is needed when mounting to a grounded chassis or heatsink. Maximum power dissipation is 41 W at case temperature.

That means no last-time-buy notice is pending, and Infineon continues to manufacture the part through its normal production lines.