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Infineon Technologies IPA028N04NM3SXKSA1 — Discrete Semiconductors

Infineon IPA028N04NM3SXKSA1 N-Channel MOSFET, 40V, 2.8mOhm

MPNIPA028N04NM3SXKSA1
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Infineon OptiMOS™ IPA028N04NM3SXKSA1, N-Channel MOSFET, 40V Vdss, 89A Id, 2.8mOhm Rds(on) at 10V, TO-220 Full Pack, -55°C~175°C.

$1.6714Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA028N04NM3SXKSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C89A (Tc)
Power dissipation38W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 95µA
Rds on (Max) @ id, vgs2.8mOhm @ 89A, 10V
Gate charge (Qg) (Max) @ vgs120 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9500 pF @ 20 V

Product details

40V, 2.8mΩ N-channel in a fully isolated TO-220

The 9500 pF input capacitance at 20 V drain-source gives a rough idea of the drive requirement — a gate driver with at least 2 A peak source/sink will keep the switching edges clean in a hard-switched converter.

Thermal and environmental range

Maximum power dissipation is 38 W at case temperature — the Full Pack package's isolation layer adds thermal resistance, so the heatsink needs to be sized with that in mind. The 175°C rating gives headroom for overload conditions in a 105°C ambient environment.

Frequently asked questions

What is the Rds(on) of IPA028N04NM3SXKSA1 at 10V?

The maximum on-resistance is 2.8 mΩ at 89 A drain current with 10 V gate drive.

What package is IPA028N04NM3SXKSA1 available in?

It comes in a TO-220 Full Pack through-hole package, supplier device code PG-TO220-FP.