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Infineon Technologies IMZA65R039M1HXKSA1

IMZA65R039M1HXKSA1 CoolSiC™ N-Channel SiC MOSFET, 650 V

MPNIMZA65R039M1HXKSA1
End of Life

Infineon CoolSiC™ series, IMZA65R039M1HXKSA1, N-Channel SiCFET, 650 V Vdss, 50 mOhm Rds(on) at 25 A, 18 V gate drive, 50 A continuous drain, PG-TO247-4-3 through-hole package, -55°C to 175°C junction temperature.

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$14.82 / ea

1 in stock — maximum per order · 3–4 days lead time

PackagingTO-247-4
RoHSROHS3 Compliant
SeriesCoolSiC™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

IMZA65R039M1HXKSA1 specifications
ParameterValue
SeriesCoolSiC™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)18V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation176W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs+20V, -2V
TechnologySiCFET (Silicon Carbide)
CaseTO-247-4
Vgs(th) (Max) @ id5.7V @ 7.5mA
Rds on (Max) @ id, vgs50mOhm @ 25A, 18V
Gate charge (Qg) (Max) @ vgs41 nC @ 18 V
Input capacitance (Ciss) (Max) @ vds1393 pF @ 400 V

Product details

Packaged in a 4-pin TO-247 with a Kelvin source connection (PG-TO247-4-3), it delivers a maximum Rds(on) of 50 mOhm at 25 A drain current with 18 V applied to the gate — that 18 V drive is the sweet spot for minimum on-resistance, and the part is rated for a gate voltage up to +20 V with a -2 V negative limit.

Gate charge and switching — 41 nC at 18 V

Total gate charge is 41 nC at 18 V. Input capacitance is 1393 pF at 400 V drain-source.

Package and mounting — the Kelvin source matters

The TO-247-4 package adds a dedicated source sense pin (the fourth lead) that separates the power current path from the gate return. That Kelvin connection eliminates the voltage drop across the bond wires from the gate-drive loop, which is what lets you switch at high di/dt without false turn-on. Mounting is through-hole; the tab is the drain. The package body is the standard TO-247 footprint, so existing heatsink clips and hole patterns work — just verify the fourth pin hole in your PCB layout.

For new designs, this is a safe selection from a lifecycle standpoint.

Frequently asked questions

What is the Rds(on) of IMZA65R039M1HXKSA1?

Maximum on-resistance is 50 mOhm at 25 A drain current with 18 V gate drive. That is the condition for the lowest conduction loss; the part is rated for gate drive up to +20 V.

What gate drive voltage does IMZA65R039M1HXKSA1 need?

The drive voltage for minimum Rds(on) is 18 V. The gate is rated for a maximum of +20 V and a minimum of -2 V, so a standard +18 V / -2 V to 0 V driver works. The 41 nC gate charge at 18 V is moderate for this current class.

What is the closest pin-compatible alternative to IMZA65R039M1HXKSA1?

Infineon offers several CoolSiC™ parts in the same TO-247-4 package with different Rds(on) and current ratings. The IMZA65R039M1HXKSA1 sits at the 50 mOhm / 50 A tier. For a lower on-resistance, look at the IMZA65R027M1HXKSA1 (27 mOhm); for a lower current design, the IMZA65R048M1HXKSA1 (48 mOhm, 40 A) is a close cross-shop candidate. All share the same 650 V rating and Kelvin-source pinout.