With 15 nC gate charge at 18 V and input capacitance of 496 pF at 400 V drain bias, this SiCFET can be driven with modest gate-driver current while maintaining fast rise and fall edges. That combination matters in hard-switched topologies where crossover losses scale with switching frequency. The low Ciss at high blocking voltage is a signature of SiC trench technology — the device stores less charge in the output capacitance than a comparable super-junction MOSFET, so the energy lost per cycle in the output capacitance is lower.
Temperature range and power dissipation
Rated for junction temperatures from -55°C to 150°C, the IMW65R107M1HXKSA1 covers the full industrial and automotive under-hood temperature envelope. Maximum power dissipation is 75 W at case temperature.
It is ROHS3 compliant.